ME4454 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4454
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 10.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 139 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP-8
ME4454 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4454 Datasheet (PDF)
me4454 me4454-g.pdf
ME4454/ME4454-G N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4454 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)18m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O
me4457 me4457-g.pdf
ME4457/ME4457-G P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4457 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)68m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(
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