All MOSFET. ME4454-G Datasheet

 

ME4454-G Datasheet and Replacement


   Type Designator: ME4454-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP-8
      - MOSFET Cross-Reference Search

 

ME4454-G Datasheet (PDF)

 ..1. Size:1242K  matsuki electric
 me4454 me4454-g.pdf pdf_icon

ME4454-G

ME4454/ME4454-G N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4454 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)18m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

 9.1. Size:1234K  matsuki electric
 me4457 me4457-g.pdf pdf_icon

ME4454-G

ME4457/ME4457-G P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4457 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)68m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SMG2358N | RZQ050P01 | IXTH11N80 | GSM4936S | STD4NA40-1 | FCA47N60F109 | ATM2N65TE

Keywords - ME4454-G MOSFET datasheet

 ME4454-G cross reference
 ME4454-G equivalent finder
 ME4454-G lookup
 ME4454-G substitution
 ME4454-G replacement

 

 
Back to Top

 


 
.