All MOSFET. ME4454-G Datasheet

 

ME4454-G Datasheet and Replacement


   Type Designator: ME4454-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 139 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP-8
 

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ME4454-G Datasheet (PDF)

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 me4454 me4454-g.pdf pdf_icon

ME4454-G

ME4454/ME4454-G N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4454 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)18m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

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 me4457 me4457-g.pdf pdf_icon

ME4454-G

ME4457/ME4457-G P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4457 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)68m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Datasheet: ME4174-G , ME4411 , ME4411-G , ME4413D , ME4413D-G , ME4435 , ME4435-G , ME4454 , 60N06 , ME4542 , ME4542-G , ME4548 , ME4548-G , ME4565 , ME4565A , ME4565A-G , ME4565AD4 .

History: AON6408 | 2SK4066-E

Keywords - ME4454-G MOSFET datasheet

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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