ME4565AD4-G MOSFET Datasheet: NP-Ch, 40V, 7.4A. Full specification with pinout and replacement list

ME4565AD4-G Specs and Replacement

Type Designator: ME4565AD4-G

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-252-4L

ME4565AD4-G substitution

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ME4565AD4-G datasheet

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ME4565AD4/ME4565AD4-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 30m @VGS=10V (N-Ch) The ME4565AD4 is the N and P-Channel logic enhancement mode RDS(ON) 58m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is ... See More ⇒

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ME4565A/ ME4565A-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 26.5m @VGS=10V (N-Ch) The ME4565A is the N and P-Channel logic enhancement mode RDS(ON) 45m @VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 44m @VGS=-10V (P-Ch) DMOS trench technology. This high density process is es... See More ⇒

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ME4565 N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4565 is the N- and P-Channel logic enhancement mode RDS(ON) 40m @VGS=10V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m @VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially RDS(ON) 54m @VGS=-10V (P-Ch) tailored to ... See More ⇒

Detailed specifications: ME4542, ME4542-G, ME4548, ME4548-G, ME4565, ME4565A, ME4565A-G, ME4565AD4, IRF540N, ME45N03T, ME45N03T-G, ME45P04, ME45P04-G, ME4626, ME4626-G, ME4825, ME4825-G