ME4565AD4-G
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4565AD4-G
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 72
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
TO-252-4L
ME4565AD4-G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4565AD4-G
Datasheet (PDF)
..1. Size:1600K matsuki electric
me4565ad4 me4565ad4-g.pdf 
ME4565AD4/ME4565AD4-G N- and P-Channel 40-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON) 30m@VGS=10V (N-Ch) The ME4565AD4 is the N and P-Channel logic enhancement mode RDS(ON) 58m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 45m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is
7.1. Size:1171K matsuki electric
me4565a me4565a-g.pdf
ME4565A/ ME4565A-G N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 26.5m@VGS=10V (N-Ch) The ME4565A is the N and P-Channel logic enhancement mode RDS(ON) 45m@VGS=4.5V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON) 44m@VGS=-10V (P-Ch) DMOS trench technology. This high density process is es
8.1. Size:611K matsuki electric
me4565.pdf
ME4565 N- and P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4565 is the N- and P-Channel logic enhancement mode RDS(ON)40m@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)45m@VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially RDS(ON)54m@VGS=-10V (P-Ch) tailored to
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