All MOSFET. ME45N03T Datasheet

 

ME45N03T Datasheet and Replacement


   Type Designator: ME45N03T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-220
 

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ME45N03T Datasheet (PDF)

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ME45N03T

ME45N03T/ME45N03T-G30V N-Channel Enhancement ModeGENERAL DESCRIPTION FEATURES RDS(ON)14m@VGS=10V The ME45N03T is the N-Channel logic enhancement mode power RDS(ON)21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially

Datasheet: ME4542-G , ME4548 , ME4548-G , ME4565 , ME4565A , ME4565A-G , ME4565AD4 , ME4565AD4-G , IRF540N , ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , ME4626-G , ME4825 , ME4825-G , ME4925 .

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