All MOSFET. ME45N03T Datasheet

 

ME45N03T Datasheet and Replacement


   Type Designator: ME45N03T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 133 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-220
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ME45N03T Datasheet (PDF)

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ME45N03T

ME45N03T/ME45N03T-G30V N-Channel Enhancement ModeGENERAL DESCRIPTION FEATURES RDS(ON)14m@VGS=10V The ME45N03T is the N-Channel logic enhancement mode power RDS(ON)21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KF11N50P | MMBF5457 | 2N3797 | FQPF19N10L | IPD90N06S4-05 | CSD17552Q5A | BUK9Y12-40E

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