ME45N03T MOSFET. Datasheet pdf. Equivalent
Type Designator: ME45N03T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 58 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 133 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-220
ME45N03T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME45N03T Datasheet (PDF)
me45n03t me45n03t-g.pdf
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ME45N03T/ME45N03T-G30V N-Channel Enhancement ModeGENERAL DESCRIPTION FEATURES RDS(ON)14m@VGS=10V The ME45N03T is the N-Channel logic enhancement mode power RDS(ON)21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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