ME45N03T Datasheet and Replacement
Type Designator: ME45N03T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 133 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO-220
ME45N03T substitution
ME45N03T Datasheet (PDF)
me45n03t me45n03t-g.pdf

ME45N03T/ME45N03T-G30V N-Channel Enhancement ModeGENERAL DESCRIPTION FEATURES RDS(ON)14m@VGS=10V The ME45N03T is the N-Channel logic enhancement mode power RDS(ON)21m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially
Datasheet: ME4542-G , ME4548 , ME4548-G , ME4565 , ME4565A , ME4565A-G , ME4565AD4 , ME4565AD4-G , IRF540N , ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , ME4626-G , ME4825 , ME4825-G , ME4925 .
History: STI120NH03L
Keywords - ME45N03T MOSFET datasheet
ME45N03T cross reference
ME45N03T equivalent finder
ME45N03T lookup
ME45N03T substitution
ME45N03T replacement
History: STI120NH03L



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