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ME45N03T Specs and Replacement

Type Designator: ME45N03T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 133 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO-220

ME45N03T substitution

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ME45N03T datasheet

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 me45n03t me45n03t-g.pdf pdf_icon

ME45N03T

ME45N03T/ME45N03T-G 30V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON) 14m @VGS=10V The ME45N03T is the N-Channel logic enhancement mode power RDS(ON) 21m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially... See More ⇒

Detailed specifications: ME4542-G, ME4548, ME4548-G, ME4565, ME4565A, ME4565A-G, ME4565AD4, ME4565AD4-G, IRF540, ME45N03T-G, ME45P04, ME45P04-G, ME4626, ME4626-G, ME4825, ME4825-G, ME4925

Keywords - ME45N03T MOSFET specs

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