ME4825 Datasheet and Replacement
Type Designator: ME4825
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 8.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOP-8
ME4825 substitution
ME4825 Datasheet (PDF)
me4825 me4825-g.pdf
ME4825/ME4825-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)21m@VGS=-10V The ME4825 is the P-Channel logic enhancement mode power field RDS(ON)29m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta
Datasheet: ME4565AD4 , ME4565AD4-G , ME45N03T , ME45N03T-G , ME45P04 , ME45P04-G , ME4626 , ME4626-G , IRLZ44N , ME4825-G , ME4925 , ME4925-G , ME4946 , ME4946-G , ME4953-G , ME4954 , ME4954-G .
History: AOT11S65L | HCD60R900 | KCY3303S | NTMFD6H846NLT1G | VS6640AC | SML5022BN | 2SK3320
Keywords - ME4825 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AOT11S65L | HCD60R900 | KCY3303S | NTMFD6H846NLT1G | VS6640AC | SML5022BN | 2SK3320
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