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ME4825 Specs and Replacement

Type Designator: ME4825

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 8.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: SOP-8

ME4825 substitution

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ME4825 datasheet

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 me4825 me4825-g.pdf pdf_icon

ME4825

ME4825/ME4825-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 21m @VGS=-10V The ME4825 is the P-Channel logic enhancement mode power field RDS(ON) 29m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially ta... See More ⇒

Detailed specifications: ME4565AD4, ME4565AD4-G, ME45N03T, ME45N03T-G, ME45P04, ME45P04-G, ME4626, ME4626-G, IRLZ44N, ME4825-G, ME4925, ME4925-G, ME4946, ME4946-G, ME4953-G, ME4954, ME4954-G

Keywords - ME4825 MOSFET specs

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