ME4954 Datasheet and Replacement
Type Designator: ME4954
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 89.9 nS
Cossⓘ - Output Capacitance: 73 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOP-8
ME4954 substitution
ME4954 Datasheet (PDF)
me4954 me4954-g.pdf

ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON)80m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely
me4953.pdf

ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)90m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(
me4953 me4953-g.pdf

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)60m@VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)90m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec
Datasheet: ME4626-G , ME4825 , ME4825-G , ME4925 , ME4925-G , ME4946 , ME4946-G , ME4953-G , IRFB4227 , ME4954-G , ME4970-G , ME50N06A , ME50N06A-G , ME50N06T , ME50N06T-G , ME50N75T , ME50N75T-G .
History: NTD3817N-1G | DMN2100UDM
Keywords - ME4954 MOSFET datasheet
ME4954 cross reference
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History: NTD3817N-1G | DMN2100UDM



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