ME4954 Datasheet and Replacement. Cross Reference Search

ME4954 Datasheet (PDF)

..1. Size:1057K matsuki electric
me4954 me4954-g.pdf pdf_icon

ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON)80m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

9.1. Size:373K 1
me4953.pdf pdf_icon

ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)90m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

9.2. Size:1461K matsuki electric
me4953 me4953-g.pdf pdf_icon

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)60m@VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)90m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

Datasheet: ME4626-G , ME4825 , ME4825-G , ME4925 , ME4925-G , ME4946 , ME4946-G , ME4953-G , IRFB4227 , ME4954-G , ME4970-G , ME50N06A , ME50N06A-G , ME50N06T , ME50N06T-G , ME50N75T , ME50N75T-G .