ME4954-G Datasheet and Replacement. Cross Reference Search

ME4954-G Datasheet (PDF)

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ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON)80m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

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ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)90m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

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ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)60m@VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)90m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .