ME4954-G - параметры транзистора MOSFET, его аналоги, datasheet

ME4954-G Datasheet (PDF)

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ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON)80m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

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ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)90m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

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ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)60m@VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)90m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .