ME50P06 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME50P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 61 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 94 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 373 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-252
ME50P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME50P06 Datasheet (PDF)
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me50p06 me50p06-g.pdf
me50p06 me50p06-g.pdf
ME50P06/ME50P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50P06 is the P-Channel logic enhancement mode power field RDS(ON)17m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)20m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
