All MOSFET. ME50P06 Datasheet

 

ME50P06 Datasheet and Replacement


   Type Designator: ME50P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 61 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 373 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO-252
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ME50P06 Datasheet (PDF)

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ME50P06

ME50P06/ME50P06-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME50P06 is the P-Channel logic enhancement mode power field RDS(ON)17m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)20m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NCE60NP09S | MMN4446 | AP3P7R0EMT | 2SK823 | HSH15810 | STK0170 | SIHFP350LC

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