All MOSFET. ME55N06A Datasheet

 

ME55N06A Datasheet and Replacement


   Type Designator: ME55N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.3 nS
   Cossⓘ - Output Capacitance: 363 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-252
 

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ME55N06A Datasheet (PDF)

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ME55N06A

ME55N06A/ ME55N06A-G N-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06A is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proces

 7.1. Size:1114K  matsuki electric
 me55n06 me55n06-g.pdf pdf_icon

ME55N06A

ME55N06/ ME55N06-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06 is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

Datasheet: ME50N06A , ME50N06A-G , ME50N06T , ME50N06T-G , ME50N75T , ME50N75T-G , ME50P06 , ME50P06-G , IRFP260 , ME55N06A-G , ME60N03-G , ME60N03AS , ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED .

History: SM6008NF | 2SK1813 | HAT2174N

Keywords - ME55N06A MOSFET datasheet

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