ME55N06A MOSFET Datasheet: N-Ch, 75V, 64A. Full specification with pinout and replacement list

ME55N06A Specs and Replacement

Type Designator: ME55N06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.3 nS

Cossⓘ - Output Capacitance: 363 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO-252

ME55N06A substitution

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ME55N06A datasheet

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ME55N06A/ ME55N06A-G N-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06A is the N-Channel logic enhancement mode power RDS(ON) 9.5m @VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proces... See More ⇒

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ME55N06/ ME55N06-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06 is the N-Channel logic enhancement mode power RDS(ON) 9.5m @VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process ... See More ⇒

Detailed specifications: ME50N06A, ME50N06A-G, ME50N06T, ME50N06T-G, ME50N75T, ME50N75T-G, ME50P06, ME50P06-G, 2SK3878, ME55N06A-G, ME60N03-G, ME60N03AS, ME60N03AS-G, ME60P06T, ME60P06T-G, ME66N04T, ME6968ED