All MOSFET. ME55N06A Datasheet

 

ME55N06A MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME55N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 114 nC
   trⓘ - Rise Time: 19.3 nS
   Cossⓘ - Output Capacitance: 363 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO-252

 ME55N06A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME55N06A Datasheet (PDF)

 ..1. Size:1148K  matsuki electric
 me55n06a me55n06a-g.pdf

ME55N06A ME55N06A

ME55N06A/ ME55N06A-G N-Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06A is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density proces

 7.1. Size:1114K  matsuki electric
 me55n06 me55n06-g.pdf

ME55N06A ME55N06A

ME55N06/ ME55N06-GN-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME55N06 is the N-Channel logic enhancement mode power RDS(ON)9.5m@VGS=10V Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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