All MOSFET. ME60P06T Datasheet

 

ME60P06T MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME60P06T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 90.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 55.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 98.6 nC
   trⓘ - Rise Time: 18.1 nS
   Cossⓘ - Output Capacitance: 427 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO-220

 ME60P06T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME60P06T Datasheet (PDF)

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 me60p06t me60p06t-g.pdf

ME60P06T ME60P06T

ME60P06T/ME60P06T-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60P06T is the P-Channel logic enhancement mode power RDS(ON)16.5m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)20.5m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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