All MOSFET. ME60P06T Datasheet

 

ME60P06T Datasheet and Replacement


   Type Designator: ME60P06T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 90.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18.1 nS
   Cossⓘ - Output Capacitance: 427 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO-220
 

 ME60P06T substitution

   - MOSFET ⓘ Cross-Reference Search

 

ME60P06T Datasheet (PDF)

 ..1. Size:950K  matsuki electric
 me60p06t me60p06t-g.pdf pdf_icon

ME60P06T

ME60P06T/ME60P06T-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60P06T is the P-Channel logic enhancement mode power RDS(ON)16.5m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)20.5m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

Datasheet: ME50N75T-G , ME50P06 , ME50P06-G , ME55N06A , ME55N06A-G , ME60N03-G , ME60N03AS , ME60N03AS-G , 5N60 , ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G .

History: NTGD3148NT1G | NP84N04KHE | RT1A040ZPTR

Keywords - ME60P06T MOSFET datasheet

 ME60P06T cross reference
 ME60P06T equivalent finder
 ME60P06T lookup
 ME60P06T substitution
 ME60P06T replacement

 

 
Back to Top

 


 
.