All MOSFET. ME60P06T Datasheet

 

ME60P06T Datasheet and Replacement


   Type Designator: ME60P06T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 90.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 55.3 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 18.1 nS
   Cossⓘ - Output Capacitance: 427 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO-220
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ME60P06T Datasheet (PDF)

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ME60P06T

ME60P06T/ME60P06T-G P- Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME60P06T is the P-Channel logic enhancement mode power RDS(ON)16.5m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)20.5m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extreme

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2N65KG-TM3-T | MGSF1N03LT1G | AP3P7R0EMT | 2N65G-TF2-T | 2SK1971 | S-L2N7002SWT1G | GSM3452

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