ME6980ED PDF and Equivalents Search

 

ME6980ED Specs and Replacement

Type Designator: ME6980ED

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1100 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: TSSOP-8

ME6980ED substitution

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ME6980ED datasheet

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 me6980ed me6980ed-g.pdf pdf_icon

ME6980ED

ME6980ED/ME6980ED-G Dual N-Channel 20V(D-S) Enhancement Mode Mosfet , ESD Protection GENERAL DESCRIPTION FEATURES RDS(ON) 14.5m @VGS=4.5V The ME6980ED is the Dual N-Channel logic enhancement mode RDS(ON) 15m @VGS=4.0V power field effect transistors are produced using high cell density, RDS(ON) 17m @VGS=3.1V DMOS trench technology. This high density proces... See More ⇒

Detailed specifications: ME60N03-G, ME60N03AS, ME60N03AS-G, ME60P06T, ME60P06T-G, ME66N04T, ME6968ED, ME6968ED-G, SPP20N60C3, ME6980ED-G, ME7114S-G, ME7804S-G, ME7839S-G, ME80N08A, ME80N08A-G, ME80N75F-G, ME80N75T

Keywords - ME6980ED MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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