All MOSFET. STH15NA50 Datasheet

 

STH15NA50 Datasheet and Replacement


   Type Designator: STH15NA50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
   |Id| ⓘ - Maximum Drain Current: 14.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110 nC
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO218
 

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STH15NA50 Datasheet (PDF)

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STH15NA50

STH15NA50/FISTW15NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH15NA50 500 V

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 sth15n50 sth15n50fi stw15n50.pdf pdf_icon

STH15NA50

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 sth15nb50fi stw15nb50.pdf pdf_icon

STH15NA50

STW15NB50STH15NB50FIN-CHANNEL 500V - 0.33 - 14.6A -T0-247/ISOWATT218 PowerMESH MOSFETTYPE VDSS RDS(on) IDSTW15NB50 500 V

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 sth150n10f7-2.pdf pdf_icon

STH15NA50

STH150N10F7-2N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTSTH150N10F7-2 100 V 0.0039 110 A 250 WTAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity31 High avalanche ruggedness2H

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Keywords - STH15NA50 MOSFET datasheet

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