STH15NA50 Datasheet. Specs and Replacement

Type Designator: STH15NA50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO218

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STH15NA50 datasheet

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STH15NA50

STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH15NA50 500 V ... See More ⇒

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STH15NA50

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STH15NA50

STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33 - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW15NB50 500 V ... See More ⇒

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 sth150n10f7-2.pdf pdf_icon

STH15NA50

STH150N10F7-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 110 A 250 W TAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity 3 1 High avalanche ruggedness 2 H... See More ⇒

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Detailed specifications: STH12N60, STH12N60FI, STH12NA60, STH12NA60FI, STH14N50, STH14N50FI, STH15N50, STH15N50FI, STP80NF70, STH15NA50FI, STH26N25, STH26N25FI, STH33N20, STH33N20FI, STH45N10, STH45N10FI, STH4N80

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