STH15NA50 Spec and Replacement
Type Designator: STH15NA50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.75 V
|Id| ⓘ - Maximum Drain Current: 14.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 110 nC
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO218
STH15NA50 substitution
STH15NA50 Specs
sth15na50.pdf
STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH15NA50 500 V ... See More ⇒
sth15nb50fi stw15nb50.pdf
STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33 - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET TYPE VDSS RDS(on) ID STW15NB50 500 V ... See More ⇒
sth150n10f7-2.pdf
STH150N10F7-2 N-channel 100 V, 0.0034 typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STH150N10F7-2 100 V 0.0039 110 A 250 W TAB Among the lowest RDS(on) on the market Excellent figure of merit (FoM) 2 Low Crss/Ciss ratio for EMI immunity 3 1 High avalanche ruggedness 2 H... See More ⇒
Detailed specifications: STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 , STH14N50FI , STH15N50 , STH15N50FI , TK10A60D , STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , STH33N20FI , STH45N10 , STH45N10FI , STH4N80 .
Keywords - STH15NA50 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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