MEE3710-G Specs and Replacement
Type Designator: MEE3710-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 530 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO-252
MEE3710-G substitution
- MOSFET ⓘ Cross-Reference Search
MEE3710-G datasheet
mee3710-g.pdf
MEE3710-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 23m @VGS=10V The MEE3710-G is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is esp... See More ⇒
mee3710t.pdf
MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON) 23m @VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance ... See More ⇒
mee3712t.pdf
MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec... See More ⇒
mee3716f.pdf
Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON) 14m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st... See More ⇒
Detailed specifications: ME9435-G, ME9435A, ME9435A-G, ME95N03, ME95N03-G, ME95N03T, ME95N03T-G, MEE15N10-G, AO3407, MEE4294-G, MESS84, JCS10N60BT, JCS10N60CC, JCS10N60CT, JCS10N60FC, JCS10N60FT, JCS10N60ST
Keywords - MEE3710-G MOSFET specs
MEE3710-G cross reference
MEE3710-G equivalent finder
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MEE3710-G substitution
MEE3710-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: MEE4294-G
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