Справочник MOSFET. MEE3710-G

 

MEE3710-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MEE3710-G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 37 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 530 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
   Тип корпуса: TO-252
     - подбор MOSFET транзистора по параметрам

 

MEE3710-G Datasheet (PDF)

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MEE3710-G

MEE3710-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)23m@VGS=10V The MEE3710-G is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is esp

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MEE3710-G

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON)23m@VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

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 mee3712t.pdf pdf_icon

MEE3710-G

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 8.2. Size:1632K  matsuki electric
 mee3716f.pdf pdf_icon

MEE3710-G

Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON)14m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st

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Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP2603GY | AON7518 | IXTA08N100D2HV | HM18N40F

 

 
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