Справочник MOSFET. MEE3710-G

 

MEE3710-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MEE3710-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 37 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 530 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для MEE3710-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

MEE3710-G Datasheet (PDF)

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 mee3710-g.pdf pdf_icon

MEE3710-G

MEE3710-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)23m@VGS=10V The MEE3710-G is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is esp

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 mee3710t.pdf pdf_icon

MEE3710-G

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON)23m@VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance

 8.1. Size:1328K  matsuki electric
 mee3712t.pdf pdf_icon

MEE3710-G

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec

 8.2. Size:1632K  matsuki electric
 mee3716f.pdf pdf_icon

MEE3710-G

Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON)14m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ME9435-G , ME9435A , ME9435A-G , ME95N03 , ME95N03-G , ME95N03T , ME95N03T-G , MEE15N10-G , 7N60 , MEE4294-G , MESS84 , JCS10N60BT , JCS10N60CC , JCS10N60CT , JCS10N60FC , JCS10N60FT , JCS10N60ST .

History: 2N7224U | SQV90N06-05 | RU20T8M7 | G7P03L | IRHM7360SE | HM10P10Q | WPM2005B

 

 
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