All MOSFET. JCS10N60CC Datasheet

 

JCS10N60CC MOSFET. Datasheet pdf. Equivalent


   Type Designator: JCS10N60CC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 51.5 nC
   trⓘ - Rise Time: 57.6 nS
   Cossⓘ - Output Capacitance: 151.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220C

 JCS10N60CC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JCS10N60CC Datasheet (PDF)

 5.1. Size:1369K  jilin sino
 jcs10n60f jcs10n60c.pdf

JCS10N60CC JCS10N60CC

R JCS10N60C JCS10N60C MAIN CHARACTERISTICS Package ID 10 A VDSS 600 V Rdson-max 0.85 Vgs=10V Qg-Typ 51.5 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 5.2. Size:1843K  jilin sino
 jcs10n60bt jcs10n60st jcs10n60ct jcs10n60ft.pdf

JCS10N60CC JCS10N60CC

N RN-CHANNEL MOSFET JCS10N60T Package MAIN CHARACTERISTICS ID 9.5 A VDSS 600 V Rdson 0.75 @Vgs=10VQg 37.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 7.1. Size:830K  jilin sino
 jcs10n65f.pdf

JCS10N60CC JCS10N60CC

R JCS10N65FC JCS10N65FC Package MAIN CHARACTERISTICS ID 10 A 650 V VDSS 1.0 Rdson-max@Vgs=10V Qg-Typ 54 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplies FEATURES

 7.2. Size:1484K  jilin sino
 jcs10n65bt jcs10n65st jcs10n65ct jcs10n65ft.pdf

JCS10N60CC JCS10N60CC

N RN-CHANNEL MOSFET JCS10N65T MAIN CHARACTERISTICS Package ID 9.5 A VDSS 650 V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURE

 7.3. Size:536K  jilin sino
 ajcs10n65ct.pdf

JCS10N60CC JCS10N60CC

N RN-CHANNEL MOSFET AJCS10N65CT MAIN CHARACTERISTICS Package ID 10A VDSS 650V Rdson-max 0.95 @Vgs=10V Qg-typ 34 nC APPLICATIONS Electronic ballast UPS UPS Automotive applications High frequency switching

 7.4. Size:741K  jilin sino
 jcs10n65f jcs10n65c jcs10n65b jcs10n65s.pdf

JCS10N60CC JCS10N60CC

N R N-CHANNEL MOSFET JCS10N65EI Package MAIN CHARACTERISTICS ID 10 A VDSS 650 V Rdson-max0.85 Vgs=10V Qg-Typ 30 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVS65R400L8AE3TR | SI2312DS

 

 
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