All MOSFET. KCB3008A Datasheet

 

KCB3008A MOSFET. Datasheet pdf. Equivalent


   Type Designator: KCB3008A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 545 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-263

 KCB3008A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KCB3008A Datasheet (PDF)

 ..1. Size:333K  kia
 kcb3008a.pdf

KCB3008A KCB3008A

120A85VKCX3008AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features Uses advanced SGTtechnology Extremely lowR (on).typ=4.5 m@Vgs=10VDS Excellent gatecharge x RDS(on) product(FOM)2. Features Motor Drives SR(Synchronous Rectification) DC/DCconvertion General purpose applications3. PinconfigurationPin Function1 Gate2 Drain

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History: JST60N30T2 | IPS60R280PFD7S

 

 
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