KCF9860A MOSFET. Datasheet pdf. Equivalent
Type Designator: KCF9860A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 2399 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
Package: TO-220F
KCF9860A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KCF9860A Datasheet (PDF)
kcf9860a kcm9860a.pdf
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47A600VKCX9860AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blockingcapability without degrading performance over time. In addition, this advanced MOSFET is designed towithstand high energy in avalanche and commutation modes. The newenergy effici
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