KCM9860A Datasheet and Replacement
Type Designator: KCM9860A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 121 nS
Cossⓘ - Output Capacitance: 2399 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.081 Ohm
Package: TO-247
KCM9860A substitution
KCM9860A Datasheet (PDF)
kcf9860a kcm9860a.pdf

47A600VKCX9860AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blockingcapability without degrading performance over time. In addition, this advanced MOSFET is designed towithstand high energy in avalanche and commutation modes. The newenergy effici
Datasheet: JCS10N65CT , JCS10N65FC , JCS10N65FT , JCS10N65ST , KCB3008A , KCF3650A , KCM3650A , KCF9860A , IRF1405 , KCY3104S , KCY3303S , KIA10N65H , KIA10N80H-220F , KIA10N80H-3P , KIA12N60H-220 , KIA12N60H-220F , KIA12N65H .
History: JFPC13N60CI | SVF12N60STR | RE1C001ZP
Keywords - KCM9860A MOSFET datasheet
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History: JFPC13N60CI | SVF12N60STR | RE1C001ZP



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