KCY3104S Datasheet and Replacement
Type Designator: KCY3104S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: DFN5X6
KCY3104S substitution
KCY3104S Datasheet (PDF)
kcy3104s.pdf
110A40VN-CHANNELMOSFETKCX3104SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =1.5m(typ.)@V =10VDS(on) GS AdvancedTrench Technology LowGate Charge High Current Capability RoHSand Halogen-Free Compliant2.Description SMPSSynchronous Rectification DC/DCConverters Or-ing3.SymbolPin Function4 Gate5,6,7,8 Drain1,2,3 Source1 of 5 R
kcy3104s.pdf
110A40VN-CHANNELMOSFETKCX3104SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =1.5m(typ.)@V =10VDS(on) GS AdvancedTrench Technology LowGate Charge High Current Capability RoHSand Halogen-Free Compliant2.Description SMPSSynchronous Rectification DC/DCConverters Or-ing3.SymbolPin Function4 Gate5,6,7,8 Drain1,2,3 Source1 of 5 R
Datasheet: JCS10N65FC , JCS10N65FT , JCS10N65ST , KCB3008A , KCF3650A , KCM3650A , KCF9860A , KCM9860A , EMB04N03H , KCY3303S , KIA10N65H , KIA10N80H-220F , KIA10N80H-3P , KIA12N60H-220 , KIA12N60H-220F , KIA12N65H , KIA13N50H-220 .
History: AOT600A60L | FDMC8200
Keywords - KCY3104S MOSFET datasheet
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History: AOT600A60L | FDMC8200
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