KCY3303S MOSFET. Datasheet pdf. Equivalent
Type Designator: KCY3303S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 95 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 1580 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
Package: DFN5X6
KCY3303S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KCY3303S Datasheet (PDF)
kcy3303s.pdf
95A30VN-CHANNEL MOSFETKCX3303SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =2.2mtyp.) @ V =10VDS(on) GS Advanced Trench Technology Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant2.Description Power Management in Desktop Computer DC/DC Converters3.SymbolPin Function4 Gate5,6,7,8 Dr
kcy3303s.pdf
95A30VN-CHANNEL MOSFETKCX3303SKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Features R =2.2mtyp.) @ V =10VDS(on) GS Advanced Trench Technology Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant2.Description Power Management in Desktop Computer DC/DC Converters3.SymbolPin Function4 Gate5,6,7,8 Dr
kcy3310a.pdf
100V 5mN-CHANNEL MOSFETKCX3310AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features Low RDS(on) & FOM Extremely low switching loss Uses advanced SGT technology Excellent stability and uniformity Fast switching and soft recovery2. Features Power switching application Low On-Resistance (typ.) RDS(on)=5.0m Hard switched and
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: FDD86102LZ
History: FDD86102LZ
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