KIA12N65H Datasheet. Specs and Replacement
Type Designator: KIA12N65H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220F
KIA12N65H substitution
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KIA12N65H datasheet
kia12n65h.pdf
12A 650V 12N65H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA12N65H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. ... See More ⇒
kia12n60h.pdf
12A 600V 12N60H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA12N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. ... See More ⇒
Detailed specifications: KCM9860A, KCY3104S, KCY3303S, KIA10N65H, KIA10N80H-220F, KIA10N80H-3P, KIA12N60H-220, KIA12N60H-220F, MMIS60R580P, KIA13N50H-220, KIA13N50H-220F, KIA13N50H-263, KIA18N50H-220F, KIA18N50H-247, KIA20N50H-220F, KIA20N50H-247, KIA20N50H-3P
Keywords - KIA12N65H MOSFET specs
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