KIA13N50H-220 Datasheet. Specs and Replacement

Type Designator: KIA13N50H-220

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 195 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: TO220

KIA13N50H-220 substitution

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KIA13N50H-220 datasheet

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KIA13N50H-220

13A 500V 13N50H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology ... See More ⇒

Detailed specifications: KCY3104S, KCY3303S, KIA10N65H, KIA10N80H-220F, KIA10N80H-3P, KIA12N60H-220, KIA12N60H-220F, KIA12N65H, AOD4184A, KIA13N50H-220F, KIA13N50H-263, KIA18N50H-220F, KIA18N50H-247, KIA20N50H-220F, KIA20N50H-247, KIA20N50H-3P, KIA2300

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