All MOSFET. KIA18N50H-220F Datasheet

 

KIA18N50H-220F Datasheet and Replacement


   Type Designator: KIA18N50H-220F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: TO220F
 

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KIA18N50H-220F Datasheet (PDF)

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KIA18N50H-220F

18A500V18N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.25 @V =10VDS(on) GS Lowgate c

Datasheet: KIA10N80H-220F , KIA10N80H-3P , KIA12N60H-220 , KIA12N60H-220F , KIA12N65H , KIA13N50H-220 , KIA13N50H-220F , KIA13N50H-263 , 5N50 , KIA18N50H-247 , KIA20N50H-220F , KIA20N50H-247 , KIA20N50H-3P , KIA2300 , KIA2301 , KIA2302 , KIA2305 .

History: 2SK3337W | BLF7G24L-100 | APT94N65B2C6 | CM84N06 | MG120R040

Keywords - KIA18N50H-220F MOSFET datasheet

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