KIA18N50H-220F MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA18N50H-220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: TO220F
KIA18N50H-220F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA18N50H-220F Datasheet (PDF)
5.1. Size:150K kia
kia18n50h.pdf
kia18n50h.pdf
18A500V18N50HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThe KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as high efficiency switched mode power supplies,active power factor correction.2. Features R =0.25 @V =10VDS(on) GS Lowgate c
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