KIA18N50H-220F Datasheet. Specs and Replacement

Type Designator: KIA18N50H-220F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO220F

KIA18N50H-220F substitution

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KIA18N50H-220F datasheet

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KIA18N50H-220F

18A 500V 18N50H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description The KIA18N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction. 2. Features R =0.25 @V =10V DS(on) GS Lowgate c... See More ⇒

Detailed specifications: KIA10N80H-220F, KIA10N80H-3P, KIA12N60H-220, KIA12N60H-220F, KIA12N65H, KIA13N50H-220, KIA13N50H-220F, KIA13N50H-263, IRFP064N, KIA18N50H-247, KIA20N50H-220F, KIA20N50H-247, KIA20N50H-3P, KIA2300, KIA2301, KIA2302, KIA2305

Keywords - KIA18N50H-220F MOSFET specs

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