KIA2808A-263
MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA2808A-263
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 178
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 150
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 152
nC
trⓘ - Rise Time: 18
nS
Cossⓘ -
Output Capacitance: 995
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
TO263
KIA2808A-263
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA2808A-263
Datasheet (PDF)
6.1. Size:147K kia
kia2808a.pdf
150A80V2808AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =4.0mtyp.@V =10VDS(on) GS 100%avalanchetested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1
8.1. Size:446K kia
kia2806a.pdf
150A60V2806AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS01. Features R =3.5mtyp.@ V =10VDS(on) GS 100% avalanche tested Reliable and rugged Lead free and green device availableRoHS Compliant2. Applications Switching application Power management for inverter systems UPS3.SymbolPin Function1
8.2. Size:211K kia
kia2803a.pdf
150A30V2803AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@V =10VDS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant2. FeaturesKIA2803A designed by the trench processing techniques to achieve extremely low on-resistance.Additional
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.