All MOSFET. KIA2N60H-252 Datasheet

 

KIA2N60H-252 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA2N60H-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO252

 KIA2N60H-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA2N60H-252 Datasheet (PDF)

 6.1. Size:330K  kia
 kia2n60h.pdf

KIA2N60H-252 KIA2N60H-252

2.0A, 600VN-CHANNELMOSFET2N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA2N60HN-Channel enhancement mode silicon gate power MOSFET is designed forhigh voltage, high speed power switching applications such as switchingregulators, switchingconverters,solenoid, motor drivers, relay drivers.2. Features R =4.1@V =10V.DS(ON) GS Lowgate cha

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