KIA2N60H-220 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA2N60H-220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220
KIA2N60H-220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA2N60H-220 Datasheet (PDF)
kia2n60h.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
2.0A, 600VN-CHANNELMOSFET2N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA2N60HN-Channel enhancement mode silicon gate power MOSFET is designed forhigh voltage, high speed power switching applications such as switchingregulators, switchingconverters,solenoid, motor drivers, relay drivers.2. Features R =4.1@V =10V.DS(ON) GS Lowgate cha
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![KIA2N60H-220](https://alltransistors.com/images/us.png)
![KIA2N60H-220](https://alltransistors.com/images/es.png)
![KIA2N60H-220](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100