KIA2N60H-220F Specs and Replacement

Type Designator: KIA2N60H-220F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 9 nC

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220F

KIA2N60H-220F substitution

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KIA2N60H-220F datasheet

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KIA2N60H-220F

2.0A, 600V N-CHANNELMOSFET 2N60H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA2N60HN-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switchingregulators, switchingconverters, solenoid, motor drivers, relay drivers. 2. Features R =4.1 @V =10V. DS(ON) GS Lowgate cha... See More ⇒

Detailed specifications: KIA2910A-263, KIA2910A-3P, KIA2910N-220, KIA2910N-263, KIA2910N-3P, KIA2N60H-251, KIA2N60H-252, KIA2N60H-220, IRF630, KIA30N06B, KIA3205S, KIA3308A-252, KIA3308A-263, KIA3308A-247, KIA3400, KIA3401, KIA3402

Keywords - KIA2N60H-220F MOSFET specs

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