All MOSFET. KIA3308A-252 Datasheet

 

KIA3308A-252 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA3308A-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 76 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 445 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252

 KIA3308A-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA3308A-252 Datasheet (PDF)

 6.1. Size:472K  kia
 kia3308a.pdf

KIA3308A-252 KIA3308A-252

80A80V3308AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =6.2m@V =10VDS(ON) GS Lead free and green device available LowRds-onto minimize conductive loss High avalanchecurrent2. Applications Power supply DC-DCconverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1of 7 Rev1.2.Nov. 201780A80V3308A

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: WMQ30N03T2 | CEB14N5 | VBMB1638 | NCE15H10A

 

 
Back to Top