KIA3308A-263 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA3308A-263
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 76 nC
trⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 445 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO263
KIA3308A-263 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA3308A-263 Datasheet (PDF)
kia3308a.pdf
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80A80V3308AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =6.2m@V =10VDS(ON) GS Lead free and green device available LowRds-onto minimize conductive loss High avalanchecurrent2. Applications Power supply DC-DCconverters3. PinconfigurationPin Function1 Gate2 Drain3 Source1of 7 Rev1.2.Nov. 201780A80V3308A
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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