STH4N80 PDF and Equivalents Search

 

STH4N80 Specs and Replacement


   Type Designator: STH4N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 150(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO218
 

 STH4N80 substitution

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STH4N80 datasheet

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STH4N80

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STH4N80

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Detailed specifications: STH15NA50 , STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , STH33N20FI , STH45N10 , STH45N10FI , 5N60 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 .

History: FDC3612

Keywords - STH4N80 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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