STH4N80 Datasheet and Replacement
Type Designator: STH4N80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 150(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO218
STH4N80 substitution
STH4N80 Datasheet (PDF)
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