KIA4N60H-251 Specs and Replacement
Type Designator: KIA4N60H-251
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO251
KIA4N60H-251 substitution
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KIA4N60H-251 datasheet
kia4n60h.pdf
4.0A600V N-CHANNELMOSFET 4N60H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features R =2.3 @V =10V DS(ON) GS Lowgate cha... See More ⇒
kia4n65h.pdf
4.0A650V N-CHANNELMOSFET 4N65H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes... See More ⇒
Detailed specifications: KIA3415, KIA3510A-220, KIA3510A-252, KIA3510A-263, KIA4603A, KIA4706A, KIA4750S-252, KIA4750S-220, 5N65, KIA4N60H-252, KIA4N60H-220, KIA4N60H-220F, KIA4N60H-262, KIA4N65H-251, KIA4N65H-252, KIA4N65H-220, KIA4N65H-220F
Keywords - KIA4N60H-251 MOSFET specs
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