KIA4N60H-251 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA4N60H-251
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.5 nC
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO251
KIA4N60H-251 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA4N60H-251 Datasheet (PDF)
kia4n60h.pdf
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