All MOSFET. KIA4N60H-251 Datasheet

 

KIA4N60H-251 Datasheet and Replacement


   Type Designator: KIA4N60H-251
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO251
 

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KIA4N60H-251 Datasheet (PDF)

 6.1. Size:316K  kia
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KIA4N60H-251

4.0A600VN-CHANNELMOSFET4N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.2. Features R =2.3@V =10VDS(ON) GS Lowgate cha

 8.1. Size:239K  kia
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KIA4N60H-251

4.0A650VN-CHANNELMOSFET4N65HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis Power MOSFET is produced using KIA advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes

Datasheet: KIA3415 , KIA3510A-220 , KIA3510A-252 , KIA3510A-263 , KIA4603A , KIA4706A , KIA4750S-252 , KIA4750S-220 , 4435 , KIA4N60H-252 , KIA4N60H-220 , KIA4N60H-220F , KIA4N60H-262 , KIA4N65H-251 , KIA4N65H-252 , KIA4N65H-220 , KIA4N65H-220F .

History: IPN60R360P7S | NTTFS010N10MCL

Keywords - KIA4N60H-251 MOSFET datasheet

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