STH4N80FI PDF and Equivalents Search

 

STH4N80FI Specs and Replacement

Type Designator: STH4N80FI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 150(max) pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: ISOWATT218

STH4N80FI substitution

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STH4N80FI datasheet

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STH4N80FI

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STH4N80FI

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Detailed specifications: STH15NA50FI , STH26N25 , STH26N25FI , STH33N20 , STH33N20FI , STH45N10 , STH45N10FI , STH4N80 , RFP50N06 , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI .

Keywords - STH4N80FI MOSFET specs

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