KIA4N65H-220F Datasheet and Replacement
Type Designator: KIA4N65H-220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO220F
KIA4N65H-220F substitution
KIA4N65H-220F Datasheet (PDF)
kia4n65h.pdf

4.0A650VN-CHANNELMOSFET4N65HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis Power MOSFET is produced using KIA advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes
kia4n60h.pdf

4.0A600VN-CHANNELMOSFET4N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for highvoltage, high speed power switching applications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.2. Features R =2.3@V =10VDS(ON) GS Lowgate cha
Datasheet: KIA4N60H-251 , KIA4N60H-252 , KIA4N60H-220 , KIA4N60H-220F , KIA4N60H-262 , KIA4N65H-251 , KIA4N65H-252 , KIA4N65H-220 , 20N50 , KIA50N03-251 , KIA50N03-252 , KIA50N03-220 , KIA50N03BD , KIA50N06B-220 , KIA5610A , KIA5N60E , KIA6035A .
History: SFF70N10Z | AOD1N60 | KHB7D0N65P1 | RD3L140SP | SNN5010D | AP01L60H | NCE2010E
Keywords - KIA4N65H-220F MOSFET datasheet
KIA4N65H-220F cross reference
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KIA4N65H-220F substitution
KIA4N65H-220F replacement
History: SFF70N10Z | AOD1N60 | KHB7D0N65P1 | RD3L140SP | SNN5010D | AP01L60H | NCE2010E



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