KIA4N65H-220F Specs and Replacement

Type Designator: KIA4N65H-220F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 16 nC

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220F

KIA4N65H-220F substitution

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KIA4N65H-220F datasheet

 6.1. Size:239K  kia
 kia4n65h.pdf pdf_icon

KIA4N65H-220F

4.0A650V N-CHANNELMOSFET 4N65H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes... See More ⇒

 8.1. Size:316K  kia
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KIA4N65H-220F

4.0A600V N-CHANNELMOSFET 4N60H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA4N60H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. 2. Features R =2.3 @V =10V DS(ON) GS Lowgate cha... See More ⇒

Detailed specifications: KIA4N60H-251, KIA4N60H-252, KIA4N60H-220, KIA4N60H-220F, KIA4N60H-262, KIA4N65H-251, KIA4N65H-252, KIA4N65H-220, STP80NF70, KIA50N03-251, KIA50N03-252, KIA50N03-220, KIA50N03BD, KIA50N06B-220, KIA5610A, KIA5N60E, KIA6035A

Keywords - KIA4N65H-220F MOSFET specs

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