STH4N90 Datasheet and Replacement

   Type Designator: STH4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 55 nC
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 150(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: TO218
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