STH4N90 PDF and Equivalents Search

 

STH4N90 Specs and Replacement

Type Designator: STH4N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 150(max) pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm

Package: TO218

STH4N90 substitution

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STH4N90 datasheet

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 sth4n90 sth4n90fi.pdf pdf_icon

STH4N90

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STH4N90

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Detailed specifications: STH26N25 , STH26N25FI , STH33N20 , STH33N20FI , STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , SI2302 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 .

Keywords - STH4N90 MOSFET specs

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