KIA6N70H-251 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA6N70H-251
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO251
KIA6N70H-251 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA6N70H-251 Datasheet (PDF)
6.1. Size:203K kia
kia6n70h.pdf
kia6n70h.pdf
5.8A,700VN-CHANNELMOSFET6N70HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using Maple semis advanced planar stripe DMOStechnology.This advanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
