All MOSFET. KIA6N70H-251 Datasheet

 

KIA6N70H-251 Datasheet and Replacement


   Type Designator: KIA6N70H-251
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO251
 

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KIA6N70H-251 Datasheet (PDF)

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KIA6N70H-251

5.8A,700VN-CHANNELMOSFET6N70HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using Maple semis advanced planar stripe DMOStechnology.This advanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m

Datasheet: KIA5610A , KIA5N60E , KIA6035A , KIA65R190 , KIA65R300 , KIA65R420 , KIA65R700 , KIA65R950 , 18N50 , KIA6N70H-252 , KIA6N70H-220F , KIA730H-251 , KIA730H-252 , KIA730H-220 , KIA730H-220F , KIA75NF75 , KIA7N60H-220 .

History: SP8K31FRA | AP3990W

Keywords - KIA6N70H-251 MOSFET datasheet

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