KIA6N70H-251 Datasheet and Replacement
Type Designator: KIA6N70H-251
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO251
KIA6N70H-251 substitution
KIA6N70H-251 Datasheet (PDF)
kia6n70h.pdf

5.8A,700VN-CHANNELMOSFET6N70HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using Maple semis advanced planar stripe DMOStechnology.This advanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation m
Datasheet: KIA5610A , KIA5N60E , KIA6035A , KIA65R190 , KIA65R300 , KIA65R420 , KIA65R700 , KIA65R950 , 75N75 , KIA6N70H-252 , KIA6N70H-220F , KIA730H-251 , KIA730H-252 , KIA730H-220 , KIA730H-220F , KIA75NF75 , KIA7N60H-220 .
History: 2SK1986-01 | SCH1333 | 2SK3082S | FQP17N08 | AG5N60S | G1NP02ELL | AFN9910
Keywords - KIA6N70H-251 MOSFET datasheet
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History: 2SK1986-01 | SCH1333 | 2SK3082S | FQP17N08 | AG5N60S | G1NP02ELL | AFN9910



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