STH4N90FI Specs and Replacement
Type Designator: STH4N90FI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 150(max) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
Package: ISOWATT218
STH4N90FI substitution
- MOSFET ⓘ Cross-Reference Search
STH4N90FI datasheet
Detailed specifications: STH26N25FI , STH33N20 , STH33N20FI , STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 , AO3407 , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI .
Keywords - STH4N90FI MOSFET specs
STH4N90FI cross reference
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STH4N90FI replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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