STH4N90FI MOSFET. Datasheet pdf. Equivalent

   Type Designator: STH4N90FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 150(max) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.2 Ohm
   Package: ISOWATT218

STH4N90FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search