KIA730H-252 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA730H-252
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO252
KIA730H-252 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA730H-252 Datasheet (PDF)
7.1. Size:321K kia
kia730h.pdf
kia730h.pdf
6A400V730HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA730H N-Channel enhancement mode silicon gate power MOSFET is designed forhigh voltage,high speed power switching applications such as switching regulators,switchingconverters,solenoid,motor drivers,relay drivers.2. Features R =0.83 Typ@V =10 VDS(on) GSLowga
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