All MOSFET. KIA730H-252 Datasheet

 

KIA730H-252 Datasheet and Replacement


   Type Designator: KIA730H-252
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO252
 

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KIA730H-252 Datasheet (PDF)

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KIA730H-252

6A400V730HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA730H N-Channel enhancement mode silicon gate power MOSFET is designed forhigh voltage,high speed power switching applications such as switching regulators,switchingconverters,solenoid,motor drivers,relay drivers.2. Features R =0.83 Typ@V =10 VDS(on) GSLowga

Datasheet: KIA65R300 , KIA65R420 , KIA65R700 , KIA65R950 , KIA6N70H-251 , KIA6N70H-252 , KIA6N70H-220F , KIA730H-251 , STF13NM60N , KIA730H-220 , KIA730H-220F , KIA75NF75 , KIA7N60H-220 , KIA7N60H-220F , KIA7N60H-262 , KIA7N60H-263 , KIA7N60U .

History: SSF80R1K3S | AM50P04-20D | 2SK532 | PSMN018-80YS | IPW50R399CP | AP3986P | IPW50R350CP

Keywords - KIA730H-252 MOSFET datasheet

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