KIA730H-252 Specs and Replacement

Type Designator: KIA730H-252

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO252

KIA730H-252 substitution

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KIA730H-252 datasheet

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KIA730H-252

6A 400V 730H N-CHANNELMOSFET KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA730H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage,high speed power switching applications such as switching regulators,switching converters,solenoid,motor drivers,relay drivers. 2. Features R =0.83 Typ @V =10 V DS(on) GS Lowga... See More ⇒

Detailed specifications: KIA65R300, KIA65R420, KIA65R700, KIA65R950, KIA6N70H-251, KIA6N70H-252, KIA6N70H-220F, KIA730H-251, STF13NM60N, KIA730H-220, KIA730H-220F, KIA75NF75, KIA7N60H-220, KIA7N60H-220F, KIA7N60H-262, KIA7N60H-263, KIA7N60U

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.