KIA730H-220 Datasheet and Replacement
Type Designator: KIA730H-220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
KIA730H-220 substitution
KIA730H-220 Datasheet (PDF)
kia730h.pdf

6A400V730HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA730H N-Channel enhancement mode silicon gate power MOSFET is designed forhigh voltage,high speed power switching applications such as switching regulators,switchingconverters,solenoid,motor drivers,relay drivers.2. Features R =0.83 Typ@V =10 VDS(on) GSLowga
Datasheet: KIA65R420 , KIA65R700 , KIA65R950 , KIA6N70H-251 , KIA6N70H-252 , KIA6N70H-220F , KIA730H-251 , KIA730H-252 , 8N60 , KIA730H-220F , KIA75NF75 , KIA7N60H-220 , KIA7N60H-220F , KIA7N60H-262 , KIA7N60H-263 , KIA7N60U , KIA7N80H-220 .
History: AM2391P | IRF630M | HSS4002
Keywords - KIA730H-220 MOSFET datasheet
KIA730H-220 cross reference
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History: AM2391P | IRF630M | HSS4002



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