STH55N10 Specs and Replacement
Type Designator: STH55N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 270 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO218
STH55N10 substitution
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STH55N10 datasheet
Detailed specifications: STH33N20 , STH33N20FI , STH45N10 , STH45N10FI , STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , 18N50 , STH55N10FI , STH5N90 , STH5N90FI , STH60N10 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 .
History: STH5N90
Keywords - STH55N10 MOSFET specs
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STH55N10 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STH5N90
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