KIA7N80H-220 MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA7N80H-220
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO220
KIA7N80H-220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA7N80H-220 Datasheet (PDF)
kia7n80h.pdf
7A800V7N80HN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using SLsemi`s advanced planar stripeDMOStechnology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance,and withstand high energy pulse in the avalanche and commutation mode.Thes
kia7n60u.pdf
7A600V7N60UN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFETis produced using KIAsemi`s advancedplanar stripeDMOStechnology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th
kia7n60h.pdf
7.0A,600VN-CHANNELMOSFET7N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThis Power MOSFET is produced using KIA`s advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Th
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
