KIA8N60H-220 Specs and Replacement

Type Designator: KIA8N60H-220

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

KIA8N60H-220 substitution

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KIA8N60H-220 datasheet

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KIA8N60H-220

7.5A600V N-CHANNELMOSFET 8N60H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1.Description The KIA8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switchingtime, lowgate charge, lowon-state resistanceand have ahigh rugged avalanchecharacteristics. This power MOSFET is usually used at high speed switching applications in power supp... See More ⇒

Detailed specifications: KIA7N60H-262, KIA7N60H-263, KIA7N60U, KIA7N80H-220, KIA7N80H-220F, KIA840S-252, KIA840S-263, KIA840S-220, IRLB3034, KIA8N60H-220F, KNB1906A, KNB2404A, KNB2708A, KNB2710A, KNB2803A, KNB2804A, KNB2804C

Keywords - KIA8N60H-220 MOSFET specs

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