All MOSFET. KIA8N60H-220 Datasheet

 

KIA8N60H-220 MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA8N60H-220
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220

 KIA8N60H-220 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA8N60H-220 Datasheet (PDF)

 6.1. Size:187K  kia
 kia8n60h.pdf

KIA8N60H-220 KIA8N60H-220

7.5A600VN-CHANNELMOSFET8N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fastswitchingtime, lowgate charge, lowon-state resistanceand have ahigh rugged avalanchecharacteristics.This power MOSFET is usually used at high speed switching applications in power supp

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History: ZVN2120GTA | TK8A50DA

 

 
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