KIA8N60H-220F MOSFET. Datasheet pdf. Equivalent
Type Designator: KIA8N60H-220F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO220F
KIA8N60H-220F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KIA8N60H-220F Datasheet (PDF)
kia8n60h.pdf
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7.5A600VN-CHANNELMOSFET8N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fastswitchingtime, lowgate charge, lowon-state resistanceand have ahigh rugged avalanchecharacteristics.This power MOSFET is usually used at high speed switching applications in power supp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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