All MOSFET. KIA8N60H-220F Datasheet

 

KIA8N60H-220F MOSFET. Datasheet pdf. Equivalent


   Type Designator: KIA8N60H-220F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 48 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 7.5 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 29 nC
   Rise Time (tr): 50 nS
   Drain-Source Capacitance (Cd): 110 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
   Package: TO220F

 KIA8N60H-220F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KIA8N60H-220F Datasheet (PDF)

 6.1. Size:187K  kia
 kia8n60h.pdf

KIA8N60H-220F KIA8N60H-220F

7.5A600VN-CHANNELMOSFET8N60HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KIA8N60 is a high voltage MOSFET and is designed to have better characteristics, such as fastswitchingtime, lowgate charge, lowon-state resistanceand have ahigh rugged avalanchecharacteristics.This power MOSFET is usually used at high speed switching applications in power supp

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