KNB2906A Datasheet and Replacement
Type Designator: KNB2906A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 83.7 nS
Cossⓘ - Output Capacitance: 926 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO263
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KNB2906A Datasheet (PDF)
knd2906a knb2906a.pdf

130A60VKNX2906AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =5.5m(typ.)@ V =10VDS(on) GS Lead free and green device available Low Rds-on to minimize conductive loss High avalanche current2. Applications Power Supply UPS Power Tool3.SymbolPin Function1 Gate2 Drain3 Source1 of 6 Rev 1.2
knb2910a knp2910a knh2910a.pdf

130A100VKNX2910AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.Applications High efficiency synchronous rectification in SMPS High speed power switching2. Features R =5.0m @V =10 VDS(on) GSSuper high dense cell design Ultra lowOn-Resistance 100%avalanchetested Lead Free and Green devices available (RoHSCompliant)3. Pinconfiguratio
knp2915a knb2915a.pdf

130A150VN-CHANNEL MOSFET KNX2915AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features RDS(ON)= 10m( typ.)@ VGS=10V Uses CRM(CQ) advanced Trench technology Extremely low on-resistance RDS(on) Excellent QgxRDS(on) product(FOM) Qualified according to JEDEC criteria2. Application Motor control and drive Battery management UPS
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - KNB2906A MOSFET datasheet
KNB2906A cross reference
KNB2906A equivalent finder
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History: 2SJ473-01S | IRF7759L2TR1PBF



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