KNB3508A Datasheet and Replacement
Type Designator: KNB3508A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO263
KNB3508A substitution
KNB3508A Datasheet (PDF)
knb3508a knd3508a knp3508a.pdf

70A80V3508AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =9.5mtyp.@V =10VDS(on) GS 100%avalanchetested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1o
Datasheet: KNB2906A , KNB2910A , KNB2915A , KNB3204A , KNB3206A , KNB3208A , KNB3306B , KNB3308B , IRF840 , KND2803A , KND2804A , KND2906A , KND3203B , KND3204A , KND3206A , KND3208A , KND3302A .
History: KMB6D0DN35QB | STB40NS15T4 | IPP037N08N3G | HRP30N04K | SSD50P03-09D | STB30NM60N
Keywords - KNB3508A MOSFET datasheet
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History: KMB6D0DN35QB | STB40NS15T4 | IPP037N08N3G | HRP30N04K | SSD50P03-09D | STB30NM60N



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