KND2804A Datasheet and Replacement
Type Designator: KND2804A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 164 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO252
KND2804A substitution
KND2804A Datasheet (PDF)
knp2804a knb2804a knd2804a.pdf

150A40VKNX2804AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =3.0m(typ.)@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gat
knp2803a knb2803a knd2803a kny2803a.pdf

150A30VKNX2803AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@ V =10VDS(on) GS Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely l
knp2803a knb2803a knd2803a.pdf

150A30VKNX2803AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@V =10VDS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely low on-resistance.Addition
Datasheet: KNB2915A , KNB3204A , KNB3206A , KNB3208A , KNB3306B , KNB3308B , KNB3508A , KND2803A , IRF540 , KND2906A , KND3203B , KND3204A , KND3206A , KND3208A , KND3302A , KND3306B , KND3403A .
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