All MOSFET. KND3502A Datasheet

 

KND3502A Datasheet and Replacement


   Type Designator: KND3502A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 75.4 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
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KND3502A Datasheet (PDF)

 ..1. Size:218K  kia
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KND3502A

70A20VKNX3502AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.DescriptionThe KNX3502A uses advanced trench technology to provide excellent R , low gate charge andDS(ON)operationwithgatevoltages as lowas 2.5V. This deviceis suitablefor useas awidevariety of applications.2. Features R =7m(typ.) @V =4.5VDS(on) DS High power and current hand

 8.1. Size:218K  kia
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KND3502A

70A80V3508AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =9.5mtyp.@V =10VDS(on) GS 100%avalanchetested Reliable and rugged Lead free and green device availableRoHSCompliant2. Applications Switching application Power management for inverter systems3.SymbolPin Function1 Gate2 Drain3 Source4 Drain1o

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History: HX2300 | NCE85H25 | CS9N95F | GSM4936S | KHB7D5N60F2 | S60N18R | ATM2N65TE

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