STH60N10 PDF and Equivalents Search

 

STH60N10 Specs and Replacement


   Type Designator: STH60N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 270 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO218
 

 STH60N10 substitution

   - MOSFET ⓘ Cross-Reference Search

 

STH60N10 datasheet

 ..1. Size:381K  st
 sth60n10.pdf pdf_icon

STH60N10

STH60N10/FI STW60N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH60N10 100 V ... See More ⇒

Detailed specifications: STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , STF13NM60N , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 .

History: AO4826 | AOI478 | AGM065N10C

Keywords - STH60N10 MOSFET specs

 STH60N10 cross reference
 STH60N10 equivalent finder
 STH60N10 pdf lookup
 STH60N10 substitution
 STH60N10 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.