STH60N10 Datasheet and Replacement
Type Designator: STH60N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 270 nS
Cossⓘ - Output Capacitance: 1100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO218
STH60N10 substitution
STH60N10 Datasheet (PDF)
sth60n10.pdf

STH60N10/FISTW60N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH60N10 100 V
Datasheet: STH4N80 , STH4N80FI , STH4N90 , STH4N90FI , STH55N10 , STH55N10FI , STH5N90 , STH5N90FI , IRF2807 , STH60N10FI , STH65N05 , STH65N05FI , STH65N06 , STH65N06FI , STH6N100 , STH6N100FI , STH6NA80 .
History: BSC032N04LS
Keywords - STH60N10 MOSFET datasheet
STH60N10 cross reference
STH60N10 equivalent finder
STH60N10 lookup
STH60N10 substitution
STH60N10 replacement
History: BSC032N04LS



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