KND4365A MOSFET. Datasheet pdf. Equivalent
Type Designator: KND4365A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.7 nC
trⓘ - Rise Time: 14.9 nS
Cossⓘ - Output Capacitance: 58.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO252
KND4365A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KND4365A Datasheet (PDF)
knd4365a knf4365a.pdf
4A650VN-CHANNELMOSFET4365AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R ,typ.=2.0 @V =10V,I =2ADS(ON) GS D Fast Switching 100%avalanchetested Improveddv/dt capability2. Application High frequency switching mode power supply Uninterruptible Power Supply(UPS) Electronic ballast3. PinconfigurationPin Function1 Gate2 Drain3 Source
knd4360a knu4360a knp4360a knf4360a.pdf
4.0A600VN-CHANNELMOSFET4360AKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =1.9(typ.)@V =10V, I 2ADS(ON) GS D= Fast switching 100% avalanchetested Improveddv/dt capability2. Application High frequency switching mode power supply Uninterruptible Power Supply(UPS) Electronic ballast3. PinconfigurationPin Function1 Gate2 Drain3 Sour
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
