KND4665B Specs and Replacement

Type Designator: KND4665B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 24 nC

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 98 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

KND4665B substitution

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KND4665B datasheet

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 knd4665b knf4665b.pdf pdf_icon

KND4665B

7A 650V N-CHANNELMOSFET KNX4665B KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description TheKNX4665B-Channel enhancement modesilicongatepower MOSFETis designedfor highvoltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology 2. Featur... See More ⇒

Detailed specifications: KND3404B, KND3404C, KND3406C, KND3502A, KND3508A, KND3706A, KND4360A, KND4365A, 2N7000, KND4820B, KND6610A, KND8103A, KND8606A, KNE4603A2, KNE6303A, KNE7306A, KNF3725A

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